? 2003 ixys all rights reserved 1 - 2 0342 dgs 10-018a(s) dgsk 20-018a ixys reserves the right to change limits, test conditions and dimensions type marking on product circuit package dgs 10-018a dgs 10-018a dgs 10-018as dgs 10-018as dgsk 20-018a dgsk 20-018a c to-220 ac a c (tab) a = anode, c = cathode , tab = cathode single common cathode to-220 ab a c a c (tab) symbol conditions maximum ratings v rrm/rsm 180 v i fav t c = 25 c; dc 15 a i fav t c = 90 c; dc 11 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 20 a t vj -55...+175 c t stg -55...+150 c p tot t c = 25 c34w m d mounting torque (versions a only) 0.4...0.6 nm features low forward voltage very high switching speed low junction capacity of gaas - low reverse current peak at turn off soft turn off temperature independent switching behaviour high temperature operation capability epoxy meets ul 94v-0 applications mhz switched mode power supplies (smps) small size smps high frequency converters resonant converters pulse test: pulse width = 5 ms, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified. gallium arsenide schottky rectifier i fav = 15 a v rrm = 180 v c junction = 22 pf symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 1.3 ma t vj = 125c v r = v rrm 1.3 ma v f i f = 5 a; t vj = 125c 0.8 v i f = 5 a; t vj = 25c 0.8 1.1 v c j v r = 100 v; t vj = 125c 22 pf r thjc 4.4 k/w r thch to-220 0.5 k/w weight 2g ac to-263 ab c (tab) a a ac a ac single
? 2003 ixys all rights reserved 2 - 2 0342 dgs 10-018a(s) dgsk 20-018a ixys reserves the right to change limits, test conditions and dimensions 0.0 0.5 1.0 1.5 2.0 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 t s k/w 0.1 1 10 100 1000 10 100 c j i f a v f v r v pf v z thjc t vj = 125c 25c dgs10-015/018bs t vj = 125c 300 20 single pulse fig. 1 typ. forward characteristics fig. 2 typ. junction capacity versus blocking voltage fig. 3 typ. thermal impedance junction to case note: explanatory comparison of the basic operational behaviour of rectifier diodes and gallium arsenide schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics by majority + minority carriers v f (i f ) extraction of excess carriers causes temperature dependant reverse recovery (t rr , i rm , q rr ) delayed saturation leads to v fr rectifier diode by majority carriers only v f (i f ), see fig. 1 reverse current charges junction capacity c j , see fig. 2; not temperature dependant no turn on overvoltage peak gaas schottky diode outline to-220 (center pin for dgsk types only) dim. mill imeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.38 0.56 0.015 0.022 r 2.29 2.79 0.090 0.110 outline to-263 ab dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .315 .350 e 9.65 10.29 .380 .405 e1 6.22 8.13 .245 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.20 0 .008 r 0.46 0.74 .018 .029
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